Electronic device including a semiconductor body or an isolation structure within a trench

ABSTRACT

An electronic device can include a substrate defining a trench. In an embodiment, a semiconductor body can be within the trench, wherein the semiconductor body has a resistivity of at least 0.05 ohm-cm and is electrically isolated from the substrate. In an embodiment, an electronic component can be within the semiconductor body. The electronic component can be a resistor or a diode. In a particular embodiment, the semiconductor body has an upper surface, the electronic component is within and along an upper surface and spaced apart from a bottom of the semiconductor body. In a further embodiment, the electronic device can further include a first electronic component within an active region of the substrate, an isolation structure within the trench, and a second electronic component within the isolation structure.

CROSS REFERENCE TO RELATED APPLICATION

This application claims priority under 35 U.S.C. § 119(e) to U.S. PatentApplication No. 62/817,903 entitled “Electronic Device Including aSemiconductor Body or an Isolation Structure Within a Trench,” by Agamet al., filed Mar. 13, 2019, which is assigned to the current assigneehereof and incorporated herein by reference in its entirety.

FIELD OF THE DISCLOSURE

The present disclosure relates to electronic devices and processes offorming electronic devices, and more particularly to, electronic devicesincluding semiconductor bodies or isolation structures within trenchesand processes of forming the same.

RELATED ART

A semiconductor die may include different components where one componentmay interfere with the operation of another. For example, a powertransistor may be isolated from a logic transistor, so that theelectrical fields of the power transistor do not adversely affect theoperation of the logic transistor. Deep trench isolation can be used toelectrically isolate the power transistor from the logic transistor;however, the deep trench isolation occupies area of the die that is onlyused for electrical isolation. Improvements in semiconductor die andmore efficient use of area of the die are desired.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments are illustrated by way of example and are not limited in theaccompanying figures.

FIGS. 1 and 2 include illustrations of top and cross-sectional views ofa portion of a workpiece including a substrate and a trench extendinginto the substrate.

FIGS. 3 and 4 include illustrations of top and cross-sectional views ofthe workpiece of FIGS. 1 and 2 including an insulating layer and asemiconductor body within the trench.

FIGS. 5 and 6 include illustrations of cross-sectional and top views ofa portion the workpiece of FIGS. 3 and 4 after forming a resistor inaccordance with an embodiment.

FIGS. 7 and 8 include illustrations of cross-sectional and top views ofa portion the workpiece of FIGS. 3 and 4 after forming a resistor inaccordance with another embodiment.

FIGS. 9 and 10 include illustrations of cross-sectional and top views ofa portion the workpiece of FIGS. 3 and 4 after forming a resistor inaccordance with a further embodiment.

FIG. 11 includes an illustration of a top view of a portion theworkpiece of FIGS. 3 and 4 after forming diodes in accordance withanother embodiment.

FIG. 12 includes an illustration of a cross-sectional view of a portionthe workpiece of FIG. 11 that includes a diode in accordance with anembodiment.

FIG. 13 includes an illustration of a cross-sectional view of a portionthe workpiece of FIG. 11 that includes a set of diodes in accordancewith an embodiment.

FIG. 14 includes a depiction of a circuit schematic of a resistorincluding a monocrystalline semiconductor material and another resistorincluding a polycrystalline semiconductor material.

FIG. 15 includes an illustration of a physical design for the circuitschematic of FIG. 14 in accordance with an embodiment.

FIG. 16 includes a depiction of a circuit schematic of resistors thatcan be used in a temperature sensing circuit.

FIG. 17 includes an illustration of a physical design for the circuitschematic of FIG. 16 in accordance with an embodiment.

FIG. 18 includes a depiction of a circuit schematic of an inverterincluding a transistor and a resistor within a semiconductor body.

FIG. 19 includes an illustration of a physical design for the circuitschematic of FIG. 18 in accordance with an embodiment.

FIG. 20 includes a depiction of a circuit schematic of a bipolartransistor having its base connected to a voltage divider.

FIG. 21 includes a depiction of a circuit schematic of a junctionfield-effect transistor having its gate connected to a voltage divider.

FIG. 22 includes a depiction of a circuit schematic of ametal-insulator-semiconductor field-effect transistor and electroniccomponents to help protect the gate of the transistor.

FIG. 23 includes an illustration of a physical design for the circuitschematic of FIG. 22 in accordance with an embodiment.

FIG. 24 includes an illustration of a physical design for the circuitschematic of FIG. 22 in accordance with another embodiment.

FIG. 25 includes an illustration of a physical design for the circuitschematic of FIG. 22 in accordance with a further embodiment.

FIG. 26 includes a depiction of a circuit schematic of a switchingcircuit.

FIG. 27 includes an illustration of a physical design for the circuitschematic of FIG. 26 in accordance with an embodiment.

Skilled artisans appreciate that elements in the figures are illustratedfor simplicity and clarity and have not necessarily been drawn to scale.For example, the dimensions of some of the elements in the figures maybe exaggerated relative to other elements to help to improveunderstanding of embodiments of the invention.

DETAILED DESCRIPTION

The following description in combination with the figures is provided toassist in understanding the teachings disclosed herein. The followingdiscussion will focus on specific implementations and embodiments of theteachings. This focus is provided to assist in describing the teachingsand should not be interpreted as a limitation on the scope orapplicability of the teachings. However, other embodiments can be usedbased on the teachings as disclosed in this application.

The term “deep trench isolation” is intended to mean an isolationstructure having a depth of at least 5 microns. Shallow trench isolationis shallower than deep trench isolation and normally has a depth lessthan 1 micron.

The term “logic transistor” is intended to mean a transistor that canflow at most 0.1 ampere of current between the transistor's drain andsource (I_(DS)) or collector and emitter (I_(CE)) when in the on-state,and can withstand a voltage of at most 10 volts between the transistor'sdrain and source (V_(DS)) or collector and emitter (V_(CE)) when in theoff-state.

The term “power transistor” is intended to mean a transistor that canflow more than 1 ampere of current between the transistor's drain andsource (I_(DS)) or collector and emitter (I_(CE)) when in the on-state,and can withstand a voltage of at least 30 volts between thetransistor's drain and source (V_(DS)) or collector and emitter (V_(CE))when in the off-state.

The terms “comprises,” “comprising,” “includes,” “including,” “has,”“having” or any other variation thereof, are intended to cover anon-exclusive inclusion. For example, a method, article, or apparatusthat comprises a list of features is not necessarily limited only tothose features but may include other features not expressly listed orinherent to such method, article, or apparatus. Further, unlessexpressly stated to the contrary, “or” refers to an inclusive-or and notto an exclusive-or. For example, a condition A or B is satisfied by anyone of the following: A is true (or present) and B is false (or notpresent), A is false (or not present) and B is true (or present), andboth A and B are true (or present).

Also, the use of “a” or “an” is employed to describe elements andcomponents described herein. This is done merely for convenience and togive a general sense of the scope of the invention. This descriptionshould be read to include one, at least one, or the singular as alsoincluding the plural, or vice versa, unless it is clear that it is meantotherwise. For example, when a single item is described herein, morethan one item may be used in place of a single item. Similarly, wheremore than one item is described herein, a single item may be substitutedfor that more than one item.

Group numbers correspond to columns within the Periodic Table ofElements based on the IUPAC Periodic Table of Elements, version datedNov. 28, 2016.

Unless otherwise defined, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this invention belongs. The materials, methods, andexamples are illustrative only and not intended to be limiting. To theextent not described herein, many details regarding specific materialsand processing acts are conventional and may be found in textbooks andother sources within the semiconductor and electronic arts.

A resistor or a diode can be formed within a portion of an electronicdevice that may otherwise be unused. In an embodiment, the electronicdevice can include a trench isolation structure that can include asemiconductor body within the trench. In a particular embodiment, thetrench isolation structure can be a deep trench isolation structure. Theresistor or diode can be within the semiconductor body, and in anembodiment, can be along an upper surface of the semiconductor body thatlies along a plane substantially parallel to a primary surface of thesubstrate. Active regions of the substrate may lie along opposite sidesof the trench isolation structure. One or more resistors, diodes or aresistor-diode combination can be within the semiconductor body andcoupled to one or more electronic components within either or both ofthe active regions.

In an aspect, an electronic device can include a substrate definingtrench having a depth of at least 5 microns; a semiconductor body withinthe trench, wherein the semiconductor body has an upper surface and aresistivity of at least 0.05 ohm-cm and is electrically isolated fromthe substrate; and an electronic component within and along an uppersurface and spaced apart from a bottom of the semiconductor body.

In another aspect, an electronic device can include a substrate defininga trench; a semiconductor body within the trench, wherein thesemiconductor body has a resistivity of at least 0.05 ohm-cm and iselectrically isolated from the substrate; and a diode within thesemiconductor body.

In a further aspect, an electronic device can include a substratedefining a trench; a first electronic component within an active regionof the substrate; an isolation structure within the trench andsurrounding the first electronic component; and a second electroniccomponent within the isolation structure. The concepts are betterunderstood after reading the remainder of the specification inconjunction with the figures.

FIGS. 1 and 2 include top and cross-sectional views of a substrate 100after patterning the substrate 100 to define a trench 120. FIG. 2 isalong a sectioning line 2-2 in FIG. 1. The substrate 100 has a primarysurface 110 and can include a monocrystalline semiconductor materialthat can include a Group 14 element, such as Si or Ge, or a compoundsemiconductor material, such as SiC, SiGe, a III-V semiconductor, suchas GaAs, GaN, AlGaN, InP, or the like, or a II-VI semiconductor, such asCdSe, PbTe, or the like. The substrate 100 have a relatively simpleconstruction, such as a Si wafer with a substantially uniform dopantconcentration, or may have a more complicated structure that may includea buried doped layer, an undoped or lightly doped epitaxial layer over aheavily doped wafer, a buried oxide layer, another suitableconstruction, or a combination thereof.

The trench 120 can be used for a deep trench isolation structure thatseparates an active region 102 from another active region 104. For morecomplex substrate constructions, the trench 120 may extend to or througha buried feature, such as a buried doped region, a buried oxide layer,or the like. The depth of the trench 120 may be at least 5 microns, atleast 11 microns, or at least 20 microns. The trench 120 does not extendthrough an entire thickness of the substrate 100. In an embodiment, thetrench 120 has a depth of at most 95 microns, at most 75 microns, or atmost 50 microns. The width of the trench 120 is sufficient to provideelectrical isolation between electronic components that may be formed atleast partly within the substrate along the primary surface 110. Whilethere is no theoretical limit on the width of the trench 120, as thewidth becomes larger, more active area is lost and limits area forelectronic components. In an embodiment, the width of the trench is atleast 0.2 micron, at least 0.3 micron, or at least 0.5 micron, and inanother embodiment, the width is at most 9.5 microns, at most 4 microns,or at most 2 microns.

FIGS. 3 and 4 illustrate top and cross-sectional views of the workpieceafter forming an insulating layer 220 and filling a remaining portion ofthe trench 120 with a semiconductor body 240 having an upper surface242. FIG. 4 is along a sectioning line 4-4 in FIG. 3. The insulatinglayer 220 can include an oxide, a nitride, or an oxynitride. Theinsulating layer 220 can be formed by thermally oxidizing the substrate100 to form the insulating layer 220 or by depositing the insulatinglayer 220. The insulating layer 220 is deposited to a thicknesssufficient to be continuous along the sidewalls and bottom of the trench120 and not so thick as to completely fill the trench 120. Whenexpressed as a percentage of the width of the trench 120, the insulatinglayer can have a thickness in a range of 0.2% to 20% of the width of thetrench 120. In an embodiment, the insulating layer has a thickness of atleast 20 nm, at least 50 nm, or at least 110 nm, and in anotherembodiment, the thickness is at most 900 nm, at most 500 nm, or at most200 nm.

The semiconductor body 240 can help to reduce stress as the workpiece isprocessed through one or more high temperature operations (for example,greater than 600° C.). In an embodiment, the semiconductor body 240 andthe substrate 100 can include the same material, for example, Si, sothat the semiconductor body 240 and the substrate 100 have approximatelythe same coefficient of thermal expansion. As originally formed (beforea selective doping operation), in an embodiment, the semiconductor body240 has a high resistivity that is at least 0.05 ohm-cm, at least 2ohm-cm, or at least 20 ohm-cm. In another embodiment, the semiconductorbody 240 has a resistivity of at most 100 Mohm-cm. In terms of dopantconcentration, the semiconductor body 240 can be deposited as an undopedsemiconductor layer. In another embodiment, the semiconductor body 240may be n-type or p-type and have a dopant concentration of at most1×10¹⁷ atoms/cm³, at most 1×10¹⁵ atoms/cm³, or at most 1×10¹⁴ atoms/cm³.The dopant concentration of the semiconductor body 240 as originallyformed, whether undoped or doped, is referred to herein as thebackground dopant concentration.

After forming the insulating layer 220 and deposing a layer ofsemiconductor material for the semiconductor body 240, portions of theinsulating layer 220 and the semiconductor material outside the trench120 are removed. An isolation structure 200 is within the trench 120,and in an embodiment, the isolation structure 200 is a deep isolationstructure. The insulating layer 220 is disposed between thesemiconductor body 240 and the sidewalls and bottom of the trench 120.The insulating layer 220 electrically isolates the semiconductor body240 from the substrate 100. In the embodiment illustrated, the activeregion 102 of the substrate 100 is laterally surrounded by the isolationstructure, and another active region 104 lies along the opposite side ofthe isolation structure 200. As will be described later in thisspecification, electronic components can be formed within the activeregions 102 and 104 and the semiconductor body 240.

Exemplary electronic components that can be formed within thesemiconductor body 240 can include at least one resistor, at least onediode, or a combination thereof. Thus, a more efficient use of spacethat would not otherwise be used can be realized. The electroniccomponents lie along or near an upper surface of the of thesemiconductor body 240. In an embodiment, the current flow through theelectronic component can be principally along a direction substantiallyparallel to the upper surface 242 of the semiconductor body 240. Theformation of the electronic components can be integrated into a processflow without adding any additional masking operations or otherprocessing steps. Complicated vertical structures that can involve extraprocessing steps are not required.

FIGS. 5 and 6 illustrate cross-sectional and top views of a resistor 500that can be formed from the semiconductor body 240. In this embodiment,the resistor 500 is within the semiconductor body 240. The resistor 500can be formed from a single doped region 522 has a dopant concentrationhigher than the dopant concentration of the semiconductor body 240. Theresistance of the resistor 500 can be determined by the dopantconcentration of the doped region 522, the distance between contacts tothe doped region 522, and the width of the semiconductor body 520 (asseen from the top view). The doped region 522 can have a dopantconcentration sufficient to allow for ohmic contacts to the doped region522. In an embodiment, the doped region 522 can be formed at the sametime as forming a source region, a drain region, or an emitter region ofa transistor formed within an active region of the substrate 100. In anembodiment, the dopant concentration can be in a range of 1×10¹⁸atoms/cm³ to 5×10²¹ atoms/cm³. The depth of the doped region 522 can bein a range of 0.02 microns to 0.5 microns. The depth can correspond to apn junction depth of the doped region 522 or where the concentration ofthe doped region 522 is at least 10% higher than the background dopantconcentration of the semiconductor body 240 when the semiconductor body240 is undoped or has the same conductivity type as the doped region522.

A salicide blocking layer 620 is formed over the workpiece and openingsare formed where contacts are to be made to the doped region 522. Thesalicide blocking layer 620 can include one or more films of an oxide, anitride, or an oxynitride. The thickness of the salicide blocking layer620 can in a range of 10 nm to 200 nm. Salicide members 642 and 644 canbe formed over the doped region 522. The salicide members 642 and 644can include TiSi₂, TaSi₂, CoSi₂, PtSi₂, or the like. The salicidemembers 642 and 644 can have a thickness in a range of 10 nm to 200 nm.

An insulating layer 650 can be formed over the workpiece and patternedto define contact openings. The insulating layer 650 can include one ormore films of an oxide, a nitride, or an oxynitride. The thickness ofthe insulating layer 650 can in a range of 0.1 micron to 5 microns.Interconnects 662 and 664 are formed within the contact openings andover the doped region 522. In an embodiment, the interconnects 662 and664 can include a bulk conductive film that includes mostly Al or Cu.When the conductive layer includes a plurality of films, an adhesionfilm or a barrier film can be deposited before the bulk conductive film.An antireflective film can be formed over the bulk conductive film andcan include a metal nitride film. The conductive layer can have athickness in a range of 0.5 micron to 3 microns. The conductive layercan be patterned to form the interconnects 662 and 664. In anotherembodiment, the salicide members 642 and 644 may be part of theinterconnects 662 and 664. In a further embodiment, the salicide members642 and 644 may not be formed, and the interconnects 662 and 664 maymake direct contact to the doped region 522. In an embodiment, theformation of the salicide blocking layer 620, salicide members 642 and644, insulating layer 650, and interconnects 662 and 664 may beintegrated with forming corresponding structures for other electroniccomponents within one or more active regions of the substrate 100.

In FIG. 6 and other top views described later in this specification, thesalicide blocking layer 620 and the insulating layer 650 are notillustrated to illustrate better the positional relationships betweendifferent parts of the electronic device. In practice, the salicideblocking layer 620 covers at least portions of the semiconductor body240 and active regions 102 and 104 where a salicide member is not to beformed. The insulating layer 650 overlies all of the workpiece exceptfor the contact openings and portions of scribe lanes.

FIGS. 7 and 8 illustrate cross-sectional and top views of a resistor 700that can be formed within the semiconductor body 240. The resistor 700is similar to the resistor 500 except that the resistor 700 includes awell region 702 and doped regions 722 and 724. The well region 702 canallow for more control over the resistance of the resistor 700, ascompared to the resistor 500 that depends on the dopant concentration ofthe doped region 522. Thus, the well region 702 allows the resistor 700to achieve a resistance that may not be possible for the resistor 500due to the dopant concentration of the doped region 522 and physicalconstraints of the resistor 500. The well region 702 can have an n-typeor a p-type conductivity type. In an embodiment, the well region 702 hasa dopant concentration higher than a dopant concentration of thesemiconductor body 240. When the resistor 700 has a relatively higherresistance, the dopant concentration of the well region 702 may be atmost 1×10¹⁷ atoms/cm³, at most 1×10¹⁶ atoms/cm³, or at most 1×10¹⁵atoms/cm³. In an embodiment, the dopant concentration is at least 1×10¹³atoms/cm³. When the resistor 700 has a relatively lower resistance, thedopant concentration may be at least 2×10¹⁷ atoms/cm³, at least 1×10¹⁸atoms/cm³ to, or at least 1×10¹⁹ atoms/cm³. The well region 702 can havea depth that is that same or deeper as compared to the doped regions 722and 724. In an embodiment, the depth of the well region 702 is less thanhalf of the depth of the trench 120; and is typically less than aquarter of the depth of the trench 120. In an embodiment, the depth ofthe well region 702 is at least 0.02 micron, at least 0.3 micron, or atleast 0.5 micron, and in another embodiment, the well region 702 has adepth that is at most 9 microns, at most 6 microns, or at most 3microns. The doped regions 722 and 724 can have any of the dopantconcentrations and depths as previously described with respect to thedoped region 522. The well region 702 can have a dopant concentrationthat is less than the dopant concentrations of the doped regions 722 and724.

The timing for the formation of the well region 702 may depend on thedesired dopant concentration and depth of the well region 702. The wellregion 702 can be formed without adding an additional masking operationor another processing step. When the well region 702 is to have arelatively lower dopant concentration and relatively deeper depth, thewell region 702 can be formed at the same time as an n-well or p-wellfor a body region, a drift region, or a base region of a transistorformed within an active region of the substrate. When the well region702 is to have a relatively lower dopant concentration and relativelyshallower depth, the well region 702 can be formed at the same time asan enhancement or depletion region for a channel region of a transistorformed within an active region 102 of the substrate 100. When the wellregion 702 is to have a relatively higher dopant concentration andrelatively shallower depth, the well region 702 can be formed at thesame time as a lightly doped drain (LDD) region of a transistor formedwithin an active region 102 or 104 of the substrate 100. The timing forthe formation of the doped regions 722 and 724 may be any of the timingsas described with respect to the formation of the doped region 522.

FIGS. 9 and 10 illustrate cross-sectional and top views of a resistor900 that can be formed from the semiconductor body 240. In thisembodiment, the resistor 900 is within the semiconductor body 240. Eachof the doped regions 722 and 724 has a dopant concentration higher thanthe semiconductor body 240. A portion of the semiconductor body 240 isdisposed between the doped regions 722 and 724. As compared to theembodiment as illustrated in FIGS. 7 and 8 that has a well region 702,the embodiment as illustrated in FIGS. 9 and 10 does not include a wellregion or other doped region between the doped regions 722 and 724. Theresistance of the resistor 900 can be determined by the dopantconcentration of the semiconductor body 240, the distance between anddepths of the doped regions 722 and 724, and the width and the depth ofthe semiconductor body 240 (as seen from the top view). In theembodiment as illustrated, at least 50% of the current flow through theresistor 900 is at a depth of at most the depth of the doped regions 722and 724. Significantly less than 50% of the current through the resistor900 flows within the semiconductor body 240 at a depth more than 1micron below the depths of the doped regions 722 and 724.

In other embodiments, one or more diodes may be formed within thesemiconductor body 240. FIGS. 11 to 13 illustrate a top view andcross-sectional views of a diode 1120 and a set of diodes 1130 that canbe formed within the semiconductor body 240. The illustrations in FIGS.11 to 13 include an exemplary layout that is not meant to limit thescope of the present invention as defined in the appended claims.Referring to FIG. 11, the semiconductor body 240 includes a left-handsection 1142, a top section 1144, a right-hand section 1146, and abottom section 1148. The semiconductor body 240 may contain only thediode 1120 or the set of diodes 1130 and not both, or may contain morethan one of the diode 1120 or the set of diodes 1130. Further, the diode1120 and set of diodes 1130 may be located within the same section ofthe semiconductor body 240, adjacent sections of the semiconductor body240, or opposite sections (illustrated in FIG. 11) of the semiconductorbody 240.

FIG. 12 includes the cross-sectional view of the diode 1120 along thesectioning line 12-12 in FIG. 11. The structure for the diode 1120includes doped regions 1222, 1224, and 1226. The doped regions 1222 and1226 have a relatively high dopant concentration that form ohmiccontacts to salicide members 1242 and 1246 or the interconnects 1262 and1266 if the optional salicide members 1242 and 1246 are not present. Thedoped region 1224 has a relatively lower dopant concentration ascompared to the doped regions 1222 and 1226. The breakdown voltage ofthe diode 1120 can be determined by the dopant concentration of thedoped region 1224, and to a lesser extent, the dopant concentration ofthe doped region having a conductivity type opposite that of the dopedregion 1224. In an embodiment, the doped region 1222 can be an N⁺region, the doped region 1224 can be an N⁻ region, and the doped region1226 can be a P⁺ region. Thus, the breakdown voltage of the diode isdetermined by the dopant concentration of the doped region 1224, and toa lesser extent, the dopant concentration of the doped region 1226. Ifthe doped region 1224 is a P⁻ region, the breakdown voltage isdetermined by the dopant concentration of the doped region 1224, and toa lesser extent, the dopant concentration of the doped region 1222.

As illustrated, the doped regions 1222, 1224, and 1226 havesubstantially the same depth. In practice, any two or all of the dopedregions 1222, 1224, and 1226 can have different depths. For example, thedoped region 1222 can be formed at the same time as an N⁺ source, drain,or emitter region, the doped region 1224 can be formed at the same timeas an N⁻ LDD region, and the doped region 1226 regions 1222, 1224, and1226 can have different depths. For example, the doped region 1222 canbe formed at the same time as an N⁺ source, drain, or emitter region,and the doped region 1226 can be formed at the same time as a P⁺ source,drain, or emitter region. In another embodiment, the doped region 1224can be formed at the same time as a well or base region, an enhancementor depletion region of a channel region. Thus, the depth of the dopedregion 1224 can vary based in part on its formation with another dopedregion in an active region of the substrate 100. In another embodiment,the doped region 1224 may not be used. The semiconductor body 240 maylie between the doped regions 1222 and 1226. When the semiconductor body240 is undoped, a P-type-Intrinsic-N-type (PIN) diode may be formed.

In a further embodiment, a Schottky diode may be formed in place of orin conjunction with the diode 1120. Either of the doped regions 1222 or1226 may be removed, and the doped region 1224 directly contacts asalicide member or an interconnect if the salicide member is notpresent. In an embodiment, the doped region 1226 is removed and thedoped region 1224 is extended to contact the salicide member 1246. In anembodiment, the doped regions 1222 and 1224 have the same conductivitytype. The dopant concentration of the doped region 1222 is sufficientlyhigh enough (e.g., at least 1×10¹⁹ ohms/cm³) to form an ohmic contactwith the metal in the salicide member 1242, and the dopant concentrationof the doped region 1224 is insufficient to form an ohmic contact withthe metal in the salicide member 1246. In this embodiment, a Schottkydiode is formed at the interface of the salicide member 1246 and thedoped region 1224. In another embodiment, both a pn diode and a Schottkydiode may be formed. The doped region 1222 is removed and the dopedregion 1224 is extended to contact the salicide member 1242. The dopedregions 1224 and 1226 have opposite conductivity types, and thus, a pndiode is formed at the pn junction between the doped regions 1224 and1226. Similar to a prior embodiment, the dopant concentration of thedoped region 1224 is insufficient to form an ohmic contact with thesalicide member 1242, and the dopant concentration of the doped region1226 is sufficiently high enough (e.g., at least 1×10¹⁹ ohms/cm³) toform an ohmic contact with the salicide member 1246. In this embodiment,a Schottky diode is formed at the interface of the salicide member 1242and the doped region 1224. In a further embodiment, the salicide membersare not present, and the metal within the interconnects 1262 and 1266form Schottky or ohmic contacts, just like the salicide members 1242 and1246.

FIG. 13 includes the cross-sectional view of the set of diodes 1130,including the diodes 1132 and 1134. The diode 1132 includes dopedregions 1332, 1334, and 1336, and the diode 1134 includes doped regions1352, 1354, and 1356. The doped regions 1332 and 1352 are similar to andcan be formed as described with respect to the doped region 1222, thedoped regions 1334 and 1354 are similar to and can be formed asdescribed with respect to the doped region 1224, and the doped regions1336 and 1356 are similar to and can be formed as described with respectto the doped region 1226. The doped region 1332 is electricallyconnected to an interconnect 1362 via a salicide member 1342, and thedoped region 1356 is electrically connected to an interconnect 1366 viaa salicide member 1346. In an embodiment, the doped regions 1336 and1352 have opposite conductivity types, and a salicide member 1344electrically shorts the doped regions 1336 and 1352 together toelectrically connect the diodes 1132 and 1134. If the salicide members1342, 1344, and 1346 are not present, a contact opening in theinsulating layer 650 can be formed over the doped regions 1336 and 1352,and another interconnect can be formed within the contact opening toelectrically short the doped regions 1336 and 1352 together. More thantwo diodes can be serially connected. As the number of diodes increases,the breakdown voltage of the set of diodes 1130 increases, and thevoltage needed to forward bias the diodes also increases. After readingthis specification, skilled artisans will be able to design a set ofdiodes for a particular application.

Many different circuits can be used with the semiconductor body 240providing at least one resistor or at least one diode for the circuits.In many of the figures that follow, interconnects will be illustratedwith lines, so that the positional relationships between electroniccomponents can be seen more clearly. In the top view illustrations,contacts are illustrated as Xs within boxes and interconnects areillustrated with lines. In practice, the interconnects may be at one ormore different interconnect levels and may obscure portions of theelectronic devices and their positional relationships to one another,which is why actual interconnects are not illustrated.

In a circuit 1400 illustrated in FIGS. 14 and 15, a pair of resistors1420 and 1440 can be connected in parallel with the resistor 1420 in theactive region 102 of the substrate 100 and the resistor 1440 within thesemiconductor body 240 within the trench 120. Shallow trench isolation1402 overlies portions of the substrate 100 outside electroniccomponents within the active region 102 (not labeled in FIG. 15), andshallow trench isolation 1404 overlies portions of the substrate 100outside electronic components within the active region 104 (not labeledin FIG. 15). In this embodiment, the resistor 1420 lies within amonocrystalline semiconductor material, and the resistor 1440 lieswithin a polycrystalline semiconductor material. The resistance of theresistor 1420 increases as the temperature increases, whereas theresistance of the resistor 1440 decreases as the temperature increases.Thus, the resistors 1420 and 1440 can be designed so that each resistorat least partly counteracts the other resistor as the temperaturechanges. In an embodiment at room temperature (e.g., in a range of 20°C. to 25° C.), the resistance of the resistor 1420 may be within 50% ofthe resistance of the resistor 1440. As the difference in resistances ata specific temperature (e.g., at room temperature) increase, the abilityof the resistors 1420 and 1440 to compensate for each other maydecrease.

In another circuit 1600 illustrated in FIGS. 16 and 17, a similar pairof resistors 1620 and 1640 can be used as part of a temperature sensingcircuit. A battery 1610 or other voltage source can be connected toterminals of the resistors 1620 and 1640. The other terminals of theresistors 1620 and 1640 are electrically connected at a node 1650. Anoutput voltage (V_(OUT)) may be measured between the node 1650 andeither of the terminals of the battery 1610 or other voltage source. Asillustrated in FIG. 16, the V_(OUT) is measured between negativeterminal of the battery 1610 and the node 1650. Similar to the priorembodiment, the resistor 1620 is in the active region 102 of thesubstrate 100, and the resistor 1640 is within the semiconductor body240 within the trench 120. In another embodiment, the positions of theresistors 1620 and 1640 may be reversed. Because a change in temperaturehas opposite effects on the resistance of the resistors 1620 and 1640,the circuit 1600 may be more sensitive to temperature changes ascompared to a temperature sensing circuit that includes resistors onlywithin the active region 102 or only within the semiconductor body 240.A plurality of temperature sensors may be used within an electronicdevice to provide a more complete temperature profile of the electronicdevice when the electronic device is in use.

In a further circuit illustrated in FIGS. 18 and 19, an inverter 1800can includes a resistor 1820 and a transistor 1840. A terminal of theresistor 1820 is coupled to a high voltage terminal 1802, and anotherterminal of the resistor 1820 is coupled to a current-carrying terminalof the transistor 1840 at a node 1850 that is coupled to an outputterminal 1808. A control terminal of the transistor 1840 is coupled toan input terminal 1806, and another current-carrying terminal of thetransistor 1840 is coupled to a low voltage terminal 1804. In anembodiment, the transistor 1840 is an enhancement-mode transistor. Inthe embodiment as illustrated, the transistor 1840 is an n-channelmetal-insulator-semiconductor field-effect transistor (MISFET), the highvoltage terminal 1802 is at V_(DD) and is electrically connected to aterminal of the resistor 1820, and the low voltage terminal 1804 is atV_(SS) and is electrically connected to a source electrode 1844 of thetransistor 1840. The input terminal 1806 is electrically connected to agate electrode 1846 of the transistor 1840, and the other terminal ofthe resistor 1820 and a drain electrode 1842 of the transistor 1840 areelectrically connected to each other at the node 1850.

The resistor 1820 can be formed within semiconductor body 240. In anembodiment, the resistor 1820 can have a relatively high resistance, forexample, greater than 0.1 Mohms, and typically in a range of 1 Mohms to10 Mohms. The transistor 1840 can be formed within the active region 102of the substrate 100. Interconnects at one or more interconnect levelscan be used to connect the resistor 1820 and transistor 1840 to eachother and to connect the electronic components to their correspondingterminals that can be connected to other portions of the electronicdevice outside of the inverter 1800.

FIGS. 20 and 21 include circuits that use a voltage divider inconjunction with a transistor. In FIG. 20, the circuit 2000 includes abipolar transistor 2020 and resistors 2042 and 2044. The bipolartransistor 2020 has an associated collector resistance illustrated as aresistor 2022 and an associated emitter resistance illustrated as aresistor 2024. In the embodiment as illustrated, the transistor 2020 isan npn bipolar transistor. Terminals of the resistors 2022 and 2042 arecoupled to a high voltage terminal 2002, another terminal of theresistor 2022, a terminal of the resistor 2042, and a base of thetransistor 2020 are coupled to one another, and another terminal of theresistor 2044 and a terminal of the resistor 2024 are coupled to a lowvoltage terminal 2004. In a particular embodiment, the high voltageterminal 2002 can be at V_(CC), and the low voltage terminal can be atV_(EE). The circuit 2100 in FIG. 21 is similar except that thetransistor 2020 and resistors 2022 and 2024 are replaced by a junctionfield-effect transistor 2120 having an associated drain resistanceillustrated as a resistor 2122 and an associated source resistanceillustrated as a resistor 2124. The high voltage terminal 2002 can be atV_(DD), and the low voltage terminal can be at V_(SS). The transistors2020 and 2120 and their associated resistors 2022, 2024, 2122, and 2124can be within an active region of the substrate 100, and one or both ofthe resistors 2042 and 2044 can be within the semiconductor body 240. Inanother embodiment, one of the resistors 2042 or 2044 may be within anactive region of the substrate, and such active region may be the sameor different active region for the transistor 2020 or 2120.

FIGS. 22 to 25 include illustrations of a more complicated circuit 2200that allows for different layout options for the circuit 2200. Thecircuit 2200 includes a resistor 2242, diodes 2262 and 2264, and atransistor 2222. An input terminal 2206 is coupled to a terminal of theresistor 2242, and a high voltage terminal 2202 is coupled to a cathodeof the diode 2262. Another terminal of the resistor 2242, an anode ofthe diode 2262, a cathode of the diode 2264, and a gate electrode of thetransistor 2222 are coupled to one another. A low voltage terminal 2204is coupled to an anode of the diode 2264. The current-carrying terminalsof the transistor 2222 are coupled to other electronic components orterminals of the electronic device. In the embodiment as illustrated,the transistor 2222 is a MISFET, and in another embodiment (notillustrated) the transistor 2222 can be a bipolar transistor. Thecircuit 2200 is well suited for a high speed logic circuit (e.g.,switching speed of at least 1 MHz). Thus, the transistor 2222 can be alogic transistor. The resistor 2242 can help to limit current flowing tothe gate electrode of the transistor 2222. The diodes 2262 and 2264 canhelp limit voltage seen at the gate electrode that may occur during aelectrostatic discharge event, voltage overshoot at the input terminal2206, or the like.

The transistor 2222 is within a box 2220, the resistor 2242 is within abox 2240, and the diodes 2262 and 2264 are within a box 2260. The boxes2220, 2240, and 2260 can correspond to different locations in differentparts of the electronic device. The transistor 2222 (box 2220) can belocated within an active region of substrate 100, the resistor 2242 (box2240) may be located within the semiconductor body 240 or an activeregion of the substrate 100, and the diodes 2262 and 2264 (box 2260) maybe located within the semiconductor body 240 or an active region of thesubstrate 100. As illustrated in FIGS. 23 to 25, a physical design ofthe circuit 2200 can be tailored to a particular application by placingthe components within boxes in a variety of locations.

FIG. 23 includes a layout where electronic components of boxes 2220 and2260 are within the same active area of the substrate and the electroniccomponent of box 2240 is within the semiconductor body 240. Thetransistor 2222 and the diodes 2262 and 2264 are separated from oneanother by shallow trench isolation 1402. In another embodiment, thediodes 2262 and 2264 can have a layout similar to the set of diodes 1130as illustrated in FIGS. 11 and 13. A drain region 2322 is coupled toanother part of the electronic device, and a source region 2324 iscoupled to a further part of the electronic device. In the embodiment asillustrated, one end of a gate electrode 2326 is electrically connectedto an N+ region of the diode 2262 and to a P+ of the diode 2264, and theother end of the gate electrode 2326 is electrically connected to aterminal of the resistor 2242 that is within the semiconductor body 240.The other terminal of the resistor 2242 is coupled to the input terminal2206. A P+ region of the diode 2262 is coupled to the high voltageterminal 2202, and an N+ region of the diode 2264 is coupled to the lowvoltage terminal 2204.

FIG. 24 includes a layout where electronic component of box 2220 iswithin an active region of the substrate and the electronic componentsof boxes 2240 and 2260 are within the semiconductor body 240. FIG. 24 issimilar to FIG. 23 except that the diodes 2262 and 2264 are within aportion of the semiconductor body 240 that is spaced apart from theresistor 2242, and the shape of the resistor 2242 is changed. If neededor desired, the resistor 2242 can be within the active region 102 or104, as opposed to being within the semiconductor body 240. Further, oneof the diodes 2262 and 2264 can be within the semiconductor body 240,and the other of the diodes 2262 and 2264 can be within the activeregion 102 or 104. The gate electrode 2326 extends to the diodes 2262and 2264 and can be electrically connected to anode of the diode 2262and the cathode of the diode 2264 with a silicide member orinterconnect.

FIG. 25 includes a layout where electronic components of boxes 2220 and2260 are within the different active regions of the substrate and theelectronic component of box 2240 is within the semiconductor body 240.In an embodiment, the different active regions lie along opposite sidesof the trench 120 that includes the semiconductor body 240. In theembodiment as illustrated, the transistor 2222 is within active region102 (not labelled in FIG. 25), and the diodes 2262 and 2264 are withinthe active region 104 (not labeled in FIG. 25) that lies along anopposite side of the deep trench isolation within the trench 120 ascompared to the active region 102. On another embodiment, one of thediodes 2262 and 2264 can be within the active region 104, and the otherof the diodes 2262 and 2264 can be within the active region 102. In afurther embodiment, one of the diodes 2262 and 2264 can be within thesemiconductor body 240, and the other of the diodes 2262 and 2264 can bewithin the active region 102 or 104.

After reading this specification, skilled artisans will understand thatmany other physical designs, including layouts, can be used to achievethe needs or desires for an application. The embodiments as illustratedin FIGS. 23 to 25 are meant to be exemplary and do not limit the scopeof the present invention.

FIGS. 26 and 27 include a switching circuit 2600 that can be used as anenergy converter, such as a Buck converter, a voltage regulator, or thelike. The circuit 2600 includes a high-side transistor 2622, a low-sidetransistor 2624, diodes 2662 and 2664, and resistors 2642 and 2644. Thecircuit can also include other electronic components that are notillustrated, such as an inductor, a capacitor, or the like coupled to anoutput terminal 2608.

Referring to FIG. 26, the high-side transistor 2622 has acurrent-carrying terminal coupled to a high voltage terminal 2602, acontrol terminal of the transistor 2622 is coupled to a high-sidecontrol circuit that includes the resistor 2642, and anothercurrent-carrying terminal of the transistor 2622 is coupled to a currentcarrying terminal of the low-side transistor 2624 at a node 2650. Acontrol terminal of the transistor 2624 is coupled to a low-side controlcircuit that includes the resistor 2644, and another current-carryingterminal of the transistor 2624 is coupled to a low voltage terminal2604. In an embodiment, the transistors 2622 and 2624 are MISFETs, andin a particular embodiment, are n-channel MISFETs. The source of thehigh-side transistor 2622 is coupled to the drain of the low-sidetransistor 2624. The high-side control circuit can include a gate drivercircuit for the transistor 2622, and the low-side control circuit caninclude a gate driver circuit for the transistor 2624. In a particularembodiment, each of the transistors 2622 and 2624 are power transistors.

The cathode of the diode 2662 is coupled to the high voltage terminal2602, the anode of the diode 2662 and the cathode of the diode 2664 arecoupled to the node 2650, and the anode of the diode 2664 is coupled tothe low voltage terminal 2604. The diodes 2662 and 2664 can havebreakdown voltages that are lower than the breakdown voltages betweenthe current-carrying terminals (e.g., BV_(DS)) to protect thetransistors 2622 and 2624 during voltage overshoot that may occur duringa switching operation of the circuit 2600. The node 2650 is coupled tothe output terminal 2608.

In FIG. 26, the transistor 2622 and the diode 2662 are within a box2610, the transistor 2624 and the diode 2664 are within a box 2630, andthe resistors 2642 and 2644 are within a box 2640. In an embodiment, theelectronic components within the box 2610 are within an active region ofthe substrate 100, the resistors 2642 and 2644 (box 2640) are within thesemiconductor body 240, the electronic components within the box 2630are within a different active region of the substrate 100 or may be on adie separate from the remainder of the circuit 2600.

FIG. 27 includes an exemplary embodiment of the components within boxes2610, 2630, and 2640. In this embodiment, each of the transistors andits corresponding diode are within the same active area, so that eachdiode provides good control of the voltage across its correspondingtransistor to reduce the effects of voltage overshoot that can be in theform of ringing at the node 2650. The electronic components within boxes2610 and 2630 lie along opposite sides of the trench 120. The resistors2642 and 2644 within box 2640 can be within portions of thesemiconductor body 240 within the trench 120.

As illustrated in FIG. 27, shallow trench isolation 2612, 2614, 2616,and 2618 overlie active regions of the substrate 100. For example, theshallow trench isolation 2612 can overlie the active region 102, theshallow trench isolation 2614 can over the active region 104, and theshallow trench isolation 2616 can over another active region, and theshallow trench isolation 2618 can over a further active region. Althoughnot illustrated, other electronic components can be formed within any ofthe active regions. For example, other electronic components for thehigh-side control circuit can be within the active region 106, and otherelectronic components for the low-side control circuit can be within theactive region 108.

In the embodiment as illustrated, the transistor 2622 includes sourceelectrodes 26224, gate electrodes 26224, and a drain electrode 26226.Drift regions 26228 are illustrated with dashed lines, as the driftregions 26228 underlie the shallow trench isolation 2612. The diode 2662is also located within the same active region as the transistor 2622.The drain electrode 26222 is illustrated as having connections to thehigh voltage terminal 2602 and a P⁺ region of the diode 2662. The gateelectrodes 26226 are connected to each other and are coupled to aterminal of the resistor 2642, and the other terminal of the resistor2642 is coupled to another electronic component within the active regionthat underlies the shallow trench isolation 2616. The source electrodes26224 are illustrated as having connections to an N⁺ region of the diode2662.

In the embodiment as illustrated, the transistor 2624 includes sourceelectrodes 26244, gate electrodes 26246, and a drain electrode 26246.Drift regions 26248 are illustrated with dashed lines, as the driftregions 26248 underlie the shallow trench isolation 2614. The diode 2664is also located within the same active region as the transistor 2624.The drain electrode 26242 is illustrated as having connections to an P⁺region of the diode 2664. The gate electrodes 26246 are connected toeach other and are coupled to a terminal of the resistor 2644, and theother terminal of the resistor 2644 is coupled to another electroniccomponent within the active region that underlies the shallow trenchisolation 2618. The source electrodes 26244 are illustrated as havingconnections to the low voltage terminal 2604 and an N⁺ region of thediode 2664.

The source electrodes 26224 of the high-side transistor 2622, the N+region of the diode 2662, the drain electrode 26242 of the low-sidetransistor 2624, and the P+ region of the diode 2664 are coupled to oneanother at the node 2650. The node 2650 is coupled to the outputterminal 2608. In the embodiment as illustrated, the node 2650 iselectrically connected to the output terminal 2608. In anotherembodiment, a capacitor (not illustrated) can be coupled between theoutput node 2650 and the low voltage terminal 2604, and an inductor (notillustrated) can be coupled between the output node 2650 and the outputterminal 2608. The capacitor and inductor can help to reduce ringing atthe output node 2650 during switching operation and reduce the amount ofa current surge to a load (not illustrated) coupled between the outputterminal 2608 and the low voltage terminal 2604.

Many other physical designs can be used for the circuit FIG. 26 beyondthe one illustrated in FIG. 27. For example, one or both of the diodes2662 and 2664 can be formed within the semiconductor body 240. One orboth of the resistors 2642 and 2644 can be forming in the same activeregion corresponding to shallow trench isolation 2616 or 2618. In afurther embodiment, a semiconductor die can include the high-sidetransistor 2622 and its corresponding control circuit, and anothersemiconductor die can include the low-side transistor 2624 and itscorresponding control circuit. Still further physical designs arepossible.

After reading this specification, skilled artisans will appreciate thatphysical designs, including layouts as illustrated, are simplified. Inpractice, more complicated and densely packed components can beimplemented using the concepts described herein. Further, powertransistors may have many more contacts as illustrated to allowsufficient current to flow through such power transistors.

Embodiments as described herein can be used to form resistors and diodeswithin a semiconductor body that would otherwise not include anyelectronic components. The semiconductor body can be part of asemiconductor material that fills a trench that is part of a deep trenchisolation structure. The semiconductor body can be isolated fromadjacent active regions by an insulating layer, and thus, thesemiconductor body may include one or more electronic components thatare coupled to electronic components within the active regions on eitheror both sides of the deep isolation trench. The process of forming theelectronic components within the semiconductor body can be integratedwith an existing process flow when forming doped regions for electroniccomponents in the active regions. Accordingly, no additional maskingoperation or process step is required.

Many different aspects and embodiments are possible. Some of thoseaspects and embodiments are described below. After reading thisspecification, skilled artisans will appreciate that those aspects andembodiments are only illustrative and do not limit the scope of thepresent invention. Embodiments may be in accordance with any one or moreof the items as listed below.

Embodiment 1

An electronic device can include a substrate defining trench having adepth of at least 5 microns; a semiconductor body within the trench,wherein the semiconductor body has an upper surface and a resistivity ofat least 0.05 ohm-cm and is electrically isolated from the substrate;and a first electronic component within and along an upper surface ofthe semiconductor body, wherein the first electronic component is spacedapart from a bottom of the semiconductor body.

Embodiment 2

The electronic device of Embodiment 1, further including an insulatinglayer disposed between the semiconductor body and a sidewall and bottomof the trench.

Embodiment 3

The electronic device of Embodiment 1, wherein the substrate includes amonocrystalline semiconductor material, and the semiconductor bodyincludes a polycrystalline semiconductor material.

Embodiment 4

The electronic device of Embodiment 1, wherein the first electroniccomponent includes a first doped region within the semiconductor body,wherein the first doped region has dopant concentration higher than abackground dopant concentration of the semiconductor body, and portionsof the semiconductor body outside of the first doped region lievertically below and laterally beside the first doped region.

Embodiment 5

The electronic device of Embodiment 4, wherein the first electroniccomponent is a diode and further includes a second doped region havingan opposite conductivity type as compared to the first doped region.

Embodiment 6

The electronic device of Embodiment 4, wherein the first electroniccomponent is a resistor including the first doped region that is a wellregion extending to a depth that is less than half the depth of thetrench.

Embodiment 7

The electronic device of Embodiment 1, further including a first dopedregion and a second doped region spaced apart from the first dopedregion, wherein the first and second doped regions have a sameconductivity type, each of the first and second doped regions has adopant concentration higher than a dopant concentration of thesemiconductor body, and a portion of the semiconductor body having theresistivity of at least 0.05 ohm-cm is disposed between the first andsecond doped regions.

Embodiment 8

An electronic device can include a substrate defining a trench;

a first electronic component within a first active region of thesubstrate; an isolation structure within the trench and surrounding thefirst electronic component; and a second electronic component within theisolation structure.

Embodiment 9

The electronic device of Embodiment 8, wherein the isolation structureincludes a semiconductor body including at least a portion thatunderlies the second electronic component; and an insulating layer lyingalong a side and bottom of the trench and electrically isolating thesemiconductor body from the substrate.

Embodiment 10

The electronic device of Embodiment 9, wherein the first active regionincludes a monocrystalline semiconductor material, and the semiconductorbody and the second electronic component includes a polycrystallinesemiconductor material.

Embodiment 11

The electronic device of Embodiment 8, further including a thirdelectronic component within a second active region of the substrate,wherein the isolation structure is disposed between the first and thirdelectronic components.

Embodiment 12

The electronic device of Embodiment 8, wherein:

the first electronic component is a power transistor or a logictransistor, and

the third electronic component is the other of the power transistor orthe logic transistor.

Embodiment 13

The electronic device of Embodiment 12, wherein the power transistorincludes a metal-insulator-semiconductor field-effect transistor, aninsulated gate bipolar transistor, or a junction bipolar transistor.

Embodiment 14

The electronic device of Embodiment 8, wherein the first electroniccomponent is a transistor, and the second electronic component is aresistor coupled to the transistor.

Embodiment 15

The electronic device of Embodiment 8, wherein the first electroniccomponent is a transistor, and the second electronic component is adiode coupled to the transistor.

Embodiment 16

The electronic device of Embodiment 8, wherein the first electroniccomponent is a first resistor, the second electronic component is asecond resistor, and the first and second resistors are connected inparallel.

Embodiment 17

The electronic device of Embodiment 16, wherein the first resistor has abody that includes a monocrystalline semiconductor material, and thesecond resistor has a body that includes a polycrystalline semiconductormaterial.

Embodiment 18

An electronic device can include a substrate defining trench; asemiconductor body within the trench, wherein the semiconductor body hasa resistivity of at least 0.05 ohm-cm and is electrically isolated fromthe substrate; and a diode within the semiconductor body.

Embodiment 19

The electronic device of Embodiment 18, wherein the semiconductor bodyand the diode include a polycrystalline semiconductor material.

Embodiment 20

The electronic device of Embodiment 19, further including a firstelectronic component and a second electronic component, wherein anisolation structure includes the semiconductor body and an insulatinglayer that electrically isolates the semiconductor body from thesubstrate, the first electronic component is along a first side of theisolation structure, the second electronic component is along a secondside of the isolation structure opposite the first side, and the firstelectronic component, the second electronic component, or each of thefirst and second electronic components is coupled to the diode.

Note that not all of the activities described above in the generaldescription or the examples are required, that a portion of a specificactivity may not be required, and that one or more further activitiesmay be performed in addition to those described. Still further, theorder in which activities are listed is not necessarily the order inwhich they are performed.

Benefits, other advantages, and solutions to problems have beendescribed above with regard to specific embodiments. However, thebenefits, advantages, solutions to problems, and any feature(s) that maycause any benefit, advantage, or solution to occur or become morepronounced are not to be construed as a critical, required, or essentialfeature of any or all the claims.

The specification and illustrations of the embodiments described hereinare intended to provide a general understanding of the structure of thevarious embodiments. The specification and illustrations are notintended to serve as an exhaustive and comprehensive description of allof the elements and features of apparatus and systems that use thestructures or methods described herein. Separate embodiments may also beprovided in combination in a single embodiment, and conversely, variousfeatures that are, for brevity, described in the context of a singleembodiment, may also be provided separately or in any subcombination.Further, reference to values stated in ranges includes each and everyvalue within that range. Many other embodiments may be apparent toskilled artisans only after reading this specification. Otherembodiments may be used and derived from the disclosure, such that astructural substitution, logical substitution, or another change may bemade without departing from the scope of the disclosure. Accordingly,the disclosure is to be regarded as illustrative rather thanrestrictive.

What is claimed is:
 1. An electronic device comprising: a substratedefining a trench having a depth of at least 5 microns; a semiconductorbody within the trench, wherein the semiconductor body has an uppersurface and a resistivity of at least 0.05 ohm-cm and is electricallyisolated from the substrate; and a first electronic component within andalong the upper surface of the semiconductor body, wherein the firstelectronic component is spaced apart from a bottom of the semiconductorbody.
 2. The electronic device of claim 1, further comprising aninsulating layer disposed between the semiconductor body and a sidewalland bottom of the trench.
 3. The electronic device of claim 1, whereinthe substrate includes a monocrystalline semiconductor material, and thesemiconductor body includes a polycrystalline semiconductor material. 4.The electronic device of claim 1, wherein the first electronic componentcomprises a first doped region within the semiconductor body, whereinthe first doped region has a concentration higher than a backgroundconcentration of the semiconductor body, and portions of thesemiconductor body outside of the first doped region lie verticallybelow and laterally beside the first doped region.
 5. The electronicdevice of claim 4, wherein the first electronic component is a diode andfurther comprises a second doped region having an opposite conductivitytype as compared to the first doped region.
 6. The electronic device ofclaim 4, wherein the first electronic component is a resistor includingthe first doped region that is a well region extending to a depth thatis less than half the depth of the trench.
 7. The electronic device ofclaim 1, further comprising a first doped region and a second dopedregion spaced apart from the first doped region, wherein the first andsecond doped regions have a same conductivity type, each of the firstand second doped regions has a concentration higher than thesemiconductor body, and a portion of the semiconductor body having theresistivity of at least 0.05 ohm-cm is disposed between the first andsecond doped regions.
 8. An electronic device comprising: a substratedefining a trench; a first electronic component within a first activeregion of the substrate; an isolation structure within the trench andsurrounding the first electronic component, wherein the isolationstructure comprises: a semiconductor body within the trench; and aninsulating layer lying along a side and a bottom of the trench andelectrically isolating the semiconductor body from the substrate; and asecond electronic component within the trench, wherein at least aportion of the semiconductor body within the trench underlies the secondelectronic component.
 9. The electronic device of claim 8, wherein thefirst active region includes a monocrystalline semiconductor material,and the semiconductor body and all of the second electronic componentincludes a polycrystalline semiconductor material.
 10. The electronicdevice of claim 8, further comprising a third electronic componentwithin a second active region of the substrate, wherein the isolationstructure is disposed between the first and third electronic components.11. The electronic device of claim 8, wherein: the first electroniccomponent is a power transistor or a logic transistor, and the thirdelectronic component is the other of the power transistor or the logictransistor.
 12. The electronic device of claim 11, wherein the powertransistor includes a metal-insulator-semiconductor field-effecttransistor, an insulated gate bipolar transistor, or a junction bipolartransistor.
 13. The electronic device of claim 8, wherein the firstelectronic component is a transistor, and the second electroniccomponent is a resistor coupled to the transistor.
 14. The electronicdevice of claim 8, wherein the first electronic component is atransistor, and the second electronic component is a diode coupled tothe transistor.
 15. The electronic device of claim 8, wherein the firstelectronic component is a first resistor, the second electroniccomponent is a second resistor, and the first and second resistors areconnected in parallel.
 16. The electronic device of claim 15, whereinthe first resistor has a body that includes a monocrystallinesemiconductor material, and the second resistor has a body that includesa polycrystalline semiconductor material.
 17. The electronic device ofclaim 8, wherein the second electronic component is a resistor.
 18. Anelectronic device comprising: a substrate defining a trench; asemiconductor body within the trench, wherein the semiconductor body hasa resistivity of at least 0.05 ohm-cm and is electrically isolated fromthe substrate; and a diode within the semiconductor body.
 19. Theelectronic device of claim 18, wherein the semiconductor body and thediode include a polycrystalline semiconductor material.
 20. Theelectronic device of claim 19, further comprising a first electroniccomponent and a second electronic component, wherein: an isolationstructure includes the semiconductor body and an insulating layer thatelectrically isolates the semiconductor body from the substrate, thefirst electronic component is along a first side of the isolationstructure, the second electronic component is along a second side of theisolation structure opposite the first side, and the first electroniccomponent, the second electronic component, or each of the first andsecond electronic components is coupled to the diode.